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| LTO-DMS MBR30100CT thru MBR30200CT 30 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200 Volts Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency Maximum Ratings * Operating Junction Temperature: 150C * Storage Temperature: - 55 C to +175C * Per diode Thermal Resistance 2.2C/W Junction to Case Mechanical Data * Case: Molded Plastic * Terminals: Plated Lead Solderable per MIL-STD-202, Method 208 * Marking:Type Number * Weight: 2.24 grams (approx) LTO-DMS Semiconductor Corporation 1468, 86th Street, Brooklyn New York, 11228, USA Tel: (718) 234 6010 / (707) 3223 4679 Fax:(718) 234 6013 / (707) 3223 6696 TO-220AB DIMENSIONS DIM A B C D E F G H I J K L M N INCHES MIN 0.570 0.380 0.100 0.235 0.335 0.110 0.500 0.095 0.025 0.016 0.142 0.160 0.045 0.102 typ MAX 0.620. 0.405 0.120 0.255 0.365 0.155 0.562 0.105 0.035 0.025 0.147 0.190 0.055 MM MIN 14.4 9.66 2.54 5.97 8.51 2.80 12.7 2.42 0.64 0.41 3.61 4.06 1.14 2.6 typ MAX 15.75 10.28 3.04 6.48 9.27 3.93 14.27 2.66 0.89 0.64 3.37 4.82 1.39 NO TE Symbol VRRM VRM VR(RMS) VF IF(AV) IFSM dv/dt Characteristics Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Forward Voltage (Note 1) IF=15.0A @TJ=25C Average Forward Current per leg 8.3ms Single Half-Sine-Wave Peak Forward Surge Current Voltage Rate Of Change (Rated VR) Maximum DC Reverse Current @TJ=25C @TJ=125C MBR30100CT 100 100 70 0.90 MBR30150CT 150 150 105 MBR30200CT 200 200 140 0.95 Unit V V V V A A V/us 15 150 10000 0.2 40 2.0 200 -55to+150 -55to+175 IR At Rated DC Blocking Voltage mA RthJC CJ TJ TSTG Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range C/ W pF C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Revision:1 2002/06/17 |
Price & Availability of MBR30200CT
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